Furthermore, the optimized parameters obtained from simulations show good agreement with corresponding values of one commercial crystalline solar cell. The electron and hole lifetime parameters were set at 100s, for both n-type and p-type, the corresponding diffusion length of 400 µm and 139 µm respectively, with the background doping density of 1×1016cm-3at the temperature of 300K. Hence, the paper demonstrates the best magnitudes for emitter thickness, base thickness, emitter dopant density and base dopant density are 0.1 μm, 100 μm, 10 20 cm −3 and 5 × 10 16 cm −3 respectively. The rear diffusion has a peak intensity of 1019cm-3with junction depth and sheet resistance. The results were validated by investigating the factors related to the carrier transmission mechanism including diffusion length, minority carrier lifetime, photogeneration and conductivity in a cell. According to open circuit voltage ( V oc) and short circuit current ( I sc) in I–V curves, the optimum magnitudes of these parameters were determined. By varying the parameters such as emitter thickness, base thickness, emitter dopant density and base dopant density, the corresponding I–V curves were generated. Modeling Parameters For the simulation using PC1D, typical device. In this study, the optimal magnitudes of silicon solar cell key parameters were calculated and verified using the PC1D simulation program. The diffusion length is quite small so that internal quantum efficiency for short.
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